Document
EtronTech
EM639325
4M x 32 bit Synchronous DRAM (SDRAM)
Advance (Rev. 2.1, Aug. /2015)
Features
• Fast access time from clock: 5/5.4/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (1M x 32-bit x 4bank) • Programmable Mode
- CAS Latency: 2 or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential & Interleaved
- Burst-Read-Single-Write
• Burst stop function • Individual byte controlled by DQM0-3 • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • Single 3.3V ±0.3V power supply • Industrial Temperature: TA = -40~85°C • Interface: LVTTL • 86-pin 400 mil plastic TSOP II package
- Pb free and Halogen free
• 90-ball 8 x 13 x 1.2mm FBGA package - Pb and Halogen Free
Overview
The EM639325 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as a quad 1M x 32 DRAM with a synchronous interface (all signals are register.