AP6900GSM-HF

Advanced Power Electronics Corp. AP6900GSM-HF Halogen-Free Product DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance ▼ RoHS Compliant Description S1/D2 S1/D2 S1/D2 G1 SO-8 S2/A G2 D1 D1 CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 30V 30mΩ 5.7A 30V 22mΩ 9.8A The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 N-Channel 1 MOSFET S1/D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Ra...