N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
AP02N...
Description
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
AP02N40H/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
400V
RDS(ON)
5Ω
G ID 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N40J) is available for low-profile applications.
G D S TO-252(H)
G D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Rating 400 +30 1.6 1 3 33 5...
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