CGHV14800

CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically deliverying >65% drain efficiency. The package options are ceramic/metal flange package. Package PN: CTGypHeV: 1444800101F7 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz Output Power 900 900 870 870 Power Gain 14.5 14.5 14.0 14.0 Drain Efficiency 68 67 67 63 Note: Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle...