BSC059N03SG

OptiMOS™2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC1 for target applications Logic level / N-channel Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Superior thermal resistance Avalanche rated; dv/dt rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 BSC059N03S G Product Summary V DS R DS(on),max ID 30 V 5.5 mΩ 73 A PG-TDSON-8 Type BSC059N03S G Package PG-TDSON-8 Marking 59N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt I D,pulse E AS dv /dt T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation V GS P to...