Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
600VCoolMOS™C7PowerTransistor IPP60R120C7
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
600VCoolMOS™C7PowerTransistor
IPP60R120C7
1Description
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopo.