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IPP12CN10LG

Infineon

Power-Transistor


Description
OptiMOS®2 Power-Transistor Features N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchrono...



Infineon

IPP12CN10LG

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