IPI076N15N5
MOSFET
OptiMOSª5Power-Transistor,150V
Features
•ExcellentgatechargexRDS(on)product(FOM) •Verylo...
IPI076N15N5
MOSFET
OptiMOSª5Power-
Transistor,150V
Features
ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) Verylowreverserecoverycharge(Qrr) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 150 V
RDS(on),max
7.6
mΩ
ID 112 A
Qrr 96 nC
I²-PAK
tab
1 23
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPI076N15N5
Package PG-TO262-3
Marking 076N15N5
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.0,2016-03-03
OptiMOSª5Power-
Transistor,150V
IPI076N15N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
