SIF902EDZ

SiF902EDZ Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 0.023 at VGS = 4.0 V 20 0.026 at VGS = 3.1 V 0.028 at VGS = 2.5 V ID (A) 10.3 10.0 9.4 9.0 Qg (Typ.) 9.1 FEATURES Halogen-free TrenchFET® Power MOSFET: 2.5 V Rated ESD Protected: 4000 V APPLICATIONS Battery Protection Circuitry - Cell Li-lon LiB/LiP Battery Packs RoHS COMPLIANT PowerPAK® 2 x 5 1 S1 2 mm 2 S1 G1 3 6 S2 5 S2 4 G2 Marking Code MAXYZ MA: Part # Code XYZ: Lot Traceability and Date Code Ordering Information: SiF902EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 1.8 kΩ D1 1.8 kΩ G2 S1 D2 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 10.3 7.0 7.4 5.1 Pulsed Drain Current (VGS = 8 V) IDM 40 Continuous Diode Current (Dio...