IPC50N04S5L-5R5
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applica...
IPC50N04S5L-5R5
OptiMOS™-5 Power-
Transistor
Product Summary
Features OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
N-channel - Enhancement mode - Logic Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
40 V 5.5 mW 50 A PG-TDSON-8-33
1 1
Type IPC50N04S5L-5R5
Package
Marking
PG-TDSON-8-33 5N04L5R5
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 50
42
200 30 50 ±16 42 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.1
page 1
2016-09-07
IPC50N04S5L-5R5
Parameter
Symbol...
