OptiMOS™-T Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175...
OptiMOS™-T Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPD5N25S3-430
Product Summary V DS R DS(on),max ID
250 V 430 mW
5A
PG-TO252-3-313
Type IPD5N25S3-430
Package PG-TO252-3-
Marking 3N25430
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation
ID
I D,pulse E AS I AS dv /dt V GS P tot
T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°C I D=1.3A -
T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
5 4 20 13 1.3 6 ±20 41 -55 ... +175 55/175/56
Unit A
mJ A kV/µs V W °C
Rev. 1.0
page 1
2012-10-18
IPD5N25S3-430
Parameter
Symbol
Conditions
Thermal ...
