OptiMOSTM-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 1...
OptiMOSTM-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPD60N10S4L-12
Product Summary V DS R DS(on),max ID
100 V 12 mW 60 A
PG-TO252-3-313
TAB
1 3
Type IPD60N10S4L-12
Package
Marking
PG-TO252-3-313 4N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=30A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 60
43
240 120 40 +/-16 94 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.0
page 1
2011-11-30
IPD60N10S4L-12
Parameter
Symbol
Conditions
Thermal char...
