BUZ31H

SIPMOS ® Power Transistor BUZ 31 H N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Type BUZ 31 H VDS 200 V ID 14.5 A RDS(on) 0.2 Ω Maximum Ratings Parameter Continuous drain current TC = 30 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Package PG-TO-220-3 Pb-free Yes Pin 3 S Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Values 14.5 58 13.5 9 Unit A mJ 200 ± 20 Class 1 95 -55 ... + 150 -55 ... + 150 ≤ 1....