Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Type
OptiMOSTM Power-
Transistor
Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
BSZ068N06NS
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 6.8 mW 40 A 19 nC 17 nC
PG-TSDSON-8 (Fused Leads)
Type
Package
Marking
BSZ068N06NS PG-TSDSON-8 (Fused Leads)
068N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
40 A
V GS=10 V, T C=100 °C
38
V GS=10 V, T C=25 °C, R thJA =60K/W2)
13
Pulsed drain current3) Avalanche energy, single pulse4)
I D,pulse E AS
T C=25 °C I D=20 A, R GS=25 W
160 43 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thi...
