www.vishay.com
TPSMC6.8A thru TPSMC47A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SMC (DO-214AB)
PRIMARY CHARACTERISTICS
VBR 6.8 V to 47 V
VWM PPPM
5.8 V to 40.2 V 1500 W
IFSM
200 A
TJ max.
185 °C
Polarity
Uni-directional
Package
SMC (DO-214AB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
FEATURES
• Junction passivation optimized design passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability and automotive requirement
• Available in uni-directional polarity only
Available
• 1500 W peak pulse power capability with a 10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
PPPM
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
IPPM
Peak forward surge current 8.3 ms single half sine-wave (2)(3)
IFSM
Maximum instantaneous forward voltage at 100 A (2)(3)
VF
Operating junction and storage temperature range
TJ, TSTG
VALUE 1500
See table next page 200 3.5
-65 to +185
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal (3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
UNIT W A A V °C
Revision: 06-Dec-2018
1 Document Number: 88407
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TPSMC6.8A thru TPSMC47A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
DEVICE DEVICE TYPE MARKING
CODE
BREAKDOWN VOLTAGE VBR (1) AT IT (V)
TEST CURRENT
IT (mA)
MIN. NOM. MAX.
STAND-OFF VOLTAGE
VWM (V)
MAXIMUM REVERSE LEAKAGE AT VWM
IR (μA)
MAXIMUM REVERSE LEAKAGE AT VWM TJ = 150 °C
ID (μA)
MAXIMUM MAXIMUM TYPICAL
PEAK PULSE CLAMPING TEMP.
SURGE VOLTAGE COEFFICIENT
CURRENT IPPM (2)
AT IPPM VC
OF VBR (3) T
(A) (V) (%/°C)
TPSMC6.8A DEP 6.45 6.80 7.14
10
5.80
1000
10 000
143
10.5
0.047
TPSMC7.5A DGP 7.13 7.50 7.88
10
6.40
500
5000
133 11.3 0.052
TPSMC8.2A DKP 7.79 8.20 8.61
10
7.02
200
2000
124 12.1 0.056
TPSMC9.1A DMP 8.65 9.10 9.55
1
7.78 50
500 112 13.4 0.060
TPSMC10A DPP 9.5 10.0 10.5
1
8.55 20
200 103 14.5 0.064
TPSMC11A DRP 10.5 11.0 11.6
1
9.40 5.0
50 96.2 15.6 0.067
TPSMC12A DTP 11.4 12.0 12.6
1
10.2 2.0
10 89.8 16.7 0.070
TPSMC13A DVP 12.4 13.0 13.7
1
11.1 2.0
10 82.4 18.2 0.072
TPSMC15A DXP 14.3 15.0 15.8
1
12.8 1.0
10 70.8 21.2 0.076
TPSMC16A DZP 15.2 16.0 16.8
1
13.6 1.0
10 66.7 22.5 0.078
TPSMC18A EEP 17.1 18.0 18.9
1
15.3 1.0
10 59.5 25.2 0.080
TPSMC20A EGP 19.0 20.0 21.0
1
17.1 1.0
10 54.2 27.7 0.082
TPSMC22A EKP 20.9 22.0 23.1
1
18.8 1.0
10 49.0 30.6 0.084
TPSMC24A EMP 22.8 24.0 25.2
1
20.5 1.0
10 45.2 33.2 0.085
TPSMC27A EPP 25.7 27.0 28.4
1
23.1 1.0
10 40.0 37.5 0.087
TPSMC30A ERP 28.5 30.0 31.5
1
25.6 1.0
10 36.2 41.4 0.088
TPSMC33A ETP 31.4 33.0 34.7
1
28.2 1.0
10 32.8 45.7 0.089
TPSMC36A EVP 34.2 36.0 37.8
1
30.8 1.0
15 30.1 49.9 0.090
TPSMC39A EXP 37.1 39.0 41.0
1
33.3 1.0
15 27.8 53.9 0.091
TPSMC43A EZP 40.9 43.0 45.2
1
36.8 1.0
20 25.3 59.3 0.092
TPSMC47A FEP 44.7 47.0 49.4
1
40.2 1.0
20 23.1 64.8 0.092
Notes
(1) VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)) (4) All terms and symbols are consistent with ANSI/IEEE C62.3.