MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF553/D
The RF Line
NPN Silicon RF Low Power Transistor
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF553/D
The RF Line
NPN Silicon RF Low Power
Transistor
Designed primarily for wideband large signal predriver stages in the VHF frequency range.
Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ)
Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF553
1.5 W, 175 MHz RF LOW POWER
TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
VCEO VCBO VEBO
IC PD
Storage Temperature Range THERMAL CHARACTERISTICS
Tstg
Characteristic
Thermal Resistance Junction to Case
Value 16 36 4.0 500 3.0 40
– 55 to +150
Unit Vdc Vdc Vdc mAdc Watts mW/...