STK0380D

STK0380D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  BVDDS=880V @Tjmax  Low gate charge: Qg=19nC (Typ.)  Low drain-source On resistance: RDS(on)=4.2Ω (Max.)  RoHS compliant device  Halogen free package Ordering Information Part Number Marking Package STK0380D STK0380 TO-252 D G S TO-252 Marking Information STK 0380 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Peak diode recovery dv/dt (Note 3) VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD dv/dt Junction temperature Storage temperature range TJ Tstg * Limited only maximum junction temperature Rev. date: 09-FEB-1...