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STK0380F

Advanced N-Ch Power MOSFET

Description

STK0380F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-source breakdown voltage: BVDSS=800V (Min.)  Low gate charge: Qg=14.2nC (Typ.)  Low drain-source On resistance: RDS(on)=3.5Ω (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package STK0380F STK0380 TO-220F-3L GDS TO...

AUK

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