JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA14 TRANSISTOR (NPN)
SOT...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate
Transistors
PZTA14
TRANSISTOR (
NPN)
SOT-223
FEATURES
z High current (max. 500 mA) z Low voltage (max. 30 V). z Pre-amplifiers requiring high input impedance.
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current base cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency
Symbol Test conditions
V(BR)CBO Ic=100μA,IE=0
VCE(SUS) Ic=100uA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=30V,IE=0
ICEO
VEB=10V,IC=0
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