MPSA29

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA29 TRANSISTOR (NPN) FEATURES z Darlington Transistor TO – 92 1.EMITTER 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCES VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature StorageTemperature Value 100 100 12 0.5 625 200 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CES Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Collector cut-off current ICES Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage IEBO hFE(1) * hFE(2) * VCE(sat)(1) * VCE(sat)(2) *...