Document
MMBTA63 / MMBTA64
PNP Silicon Epitaxial Planar Transistor
for general purpose application, darlington transistor
TO-236 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
-VCBO -VCEO -VEBO
-IC Ptot Tj TStg
Value 30 30 10 500 200 150
- 55 to + 150
Unit V V V mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA
Symbol
MMBTA63 MMBTA64 MMBTA63 MMBTA64
hFE hFE hFE hFE
-ICBO
-IEBO
-V(BR)CEO
-VCE(sat)
-VBE(on)
fT
Min.
5000 10000 10000 20000
-
-
30
-
-
125
Max.
-
100
100
-
1.5
2
-
Unit
-
nA
nA
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
MMBTA63 / MMBTA64
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
.