MMBTA28

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA28 TRANSISTOR (NPN) SOT–23 FEATURES  High Current Gain MARKING: 3SS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 12 500 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 80 V Collector-emitter sustain voltage VCEO(sus) IC=100µA, VBE=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 12 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICES V...