MCRN100-8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Thyristors MCRN100- 6,- 8 FEATURES Current-IGT : 200 µA ITRMS : 0.8 A VRRM/ VDRM : MCRN100-6: 400 V MCRN100-8: 600 V Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ SOT-89-3L 1.GATE 2.ANODE 3.KATHODE ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified） Parameter Symbol Test conditions On state voltage VTM* ITM=1A Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCRN100-6 MCRN100-8 Peak forward or reverse blocking Current Holding current VGT VDRM AND VRRM IDRM IRRM IH VAK=7V IDRM= 10 µA VAK= Rated VDRM or VRRM IHL= 20mA ,VAK = 7V AA Gate trigger current A IGT VAK=7V B * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 Min Max Unit 1.7 V 0.8 V 400 600 10 V µA 5 mA 5 30 30 380 µA µA 80 200 µA www.cj-elec.com 1 D,Sep,2015 Typical Characteristics I —— GT T a 50 40 Pulsed V =7V A...