JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSD1692 TRANSISTOR (NPN)
TO ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate
Transistors
KSD1692
TRANSISTOR (
NPN)
TO – 126
FEATURES
z High DC Current Gain z Low Collector Saturation Voltage z High Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 150 100
8 3 1.25 100 150 -55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage
V(BR)CBO VCEO(SUS)*
IC=1mA,IE=0 IC=30mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=5mA,IC=0
Collector cut-off current
ICBO
VCB=100V,IE=0
Emitter cut-off current DC current gain
Collect...
