CZT122

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 TRANSISTOR (NPN) FEATURES z Complementary to CZT127 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications SOT-223 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 1W Tj Junction Temperature Tstg Storage Temperature 150 -65~150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Base cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=1m A...