BSC160N15NS5
MOSFET
OptiMOSTM5Power-Transistor,150V
Features
•N-channel,normallevel •ExcellentgatechargexRD...
BSC160N15NS5
MOSFET
OptiMOSTM5Power-
Transistor,150V
Features
N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) Verylowreverserecoverycharge(Qrr) 150°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 150 V
RDS(on),max
16
mΩ
ID 56 A
Qrr 26 nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC160N15NS5
Package PG-TDSON-8
Marking 160N15NS
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.2,2016-01-22
OptiMOSTM5Power-
Transistor,150V
BSC160N15NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 M...
