BSC16DN25NS3G

Type OptiMOSTM3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 BSC16DN25NS3 G Product Summary VDS RDS(on),max ID 250 V 165 mW 10.9 A PG-TDSON-8 Type BSC16DN25NS3 G Package PG-TDSON-8 Marking 16DN25NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse Reverse diode dv /dt E AS dv /dt I D=5.5 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 Value 10.9 7.7 44 120 10 ±...