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BSC12DN20NS3G Dataheets PDF



Part Number BSC12DN20NS3G
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet BSC12DN20NS3G DatasheetBSC12DN20NS3G Datasheet (PDF)

Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC12DN20NS3 G Product Summary VDS RDS(on),max ID 200 V 125 mΩ 11.3 A PG-TDSON-8 Type BSC12DN20NS3 G Package PG-TDSON-8 Marking 12DN20NS Maximum .

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Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC12DN20NS3 G Product Summary VDS RDS(on),max ID 200 V 125 mΩ 11.3 A PG-TDSON-8 Type BSC12DN20NS3 G Package PG-TDSON-8 Marking 12DN20NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T C=25 °C T C=100 °C T C=25 °C I D=5.7 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 Value 11.3 8.0 45 60 10 ±20 50.


BSC026N04LS BSC12DN20NS3G BSC120N03LSG


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