Document
Type
OptiMOSTM3 Power-Transistor
Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
BSC12DN20NS3 G
Product Summary VDS RDS(on),max ID
200 V 125 mΩ 11.3 A
PG-TDSON-8
Type BSC12DN20NS3 G
Package PG-TDSON-8
Marking 12DN20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
ID
I D,pulse E AS dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=5.7 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) see figure 3
Value
11.3 8.0 45 60 10 ±20 50.