Power MOSFET
AUTOMOTIVE GRADE
Features Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance ...
Description
AUTOMOTIVE GRADE
Features Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRLS4030-7P
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max. ID
100V 3.2m 3.9m 190A
G Gate
D2Pak 7 Pin AUIRLS4030-7P
D Drain
S Source
Base Part Number AUIRLS4030-7P
Package Ty...
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