AUIRLS3036-7P

AUTOMOTIVE GRADE PD - 97719A AUIRLS3036-7P Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 1.5m: max. 1.9m: ID (Silicon Limited) c300A S ID (Package Limited) 240A D S SS S S G D2Pak 7 Pin AUIRLS3036-7P G Gate D D ra in S Source Absolute ...