AUIRLR3114Z

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 4.9m 6.5m 130A 42A D D S G D-Pak AUIRLR3114Z S GD I-Pak AUIRLU3114Z G Gate D Drain S So...