AUIRLR024N

  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS RDS(on) ID AUIRLR024N AUIRLU024N HEXFET® Power MOSFET 55V max. 0.065 17A D D S G D-Pak AUIRLR024N S GD I-Pak AUIRLU024N G Gate D Drain S Source Base part number AUIRLU024N AUIRLR024N Package Ty...