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AUIRLR014N Dataheets PDF



Part Number AUIRLR014N
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet AUIRLR014N DatasheetAUIRLR014N Datasheet (PDF)

AUTOMOTIVE GRADE   Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This .

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AUTOMOTIVE GRADE   Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS RDS(on) ID AUIRLR014N HEXFET® Power MOSFET 55V max. 0.14 10A D G Gate S G D-Pak AUIRLR014N D Drain S Source Base part number AUIRLR014N Package Type D-Pak Standard Pack Form Quantity Tube 75.


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