Power MOSFET
AUTOMOTIVE GRADE
AUIRLL2705
Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dy...
Description
AUTOMOTIVE GRADE
AUIRLL2705
Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
VDSS
55V
RDS(on) max.
0.04
ID 3.8A
D
S
D G
SOT-223 AUIRLL2705
G Gate
D Drain
S Source
Base part number AUIRLL2705
Package Type SOT-223
Standard Pack
Form
Quantity
...
Similar Datasheet