AUIRL3705ZL

  AUTOMOTIVE GRADE Features  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRL3705Z AUIRL3705ZS AUIRL3705ZL HEXFET® Power MOSFET VDSS 55V RDS(on) typ. 6.5m max. 8.0m ID (Silicon Limited) 86A ID (Package Limited) 75A DD GDS TO-220AB AUIRL3705Z G Gate S G D2Pak AUIRL3705ZS D Drain S GD T...