AUIRFU5305

  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS RDS(on) ID AUIRFR5305 AUIRFU5305 max. -55V 0.065 -31A D D S G D-Pak AUIRFR5305 S GD I-Pak AUIRFU5305 G Gate D Drain S Source Base part number AUIRFU5305 AUIRFR5305 Package Type I-Pak D-Pak Standard Pack Form Quanti...