AUIRFR4620

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. VDSS RDS(on) ID G Gate AUIRFR4620 HEXFET® Power MOSFET typ. max. 200V 64m 78m 24A D S G D-Pak AUIRFR4620 D Drain S Source Base part number AUIRFR4620 Package Type D-Pak Standard Pack Form Quantity Tube ...