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HGH25N120A
N-Channel Enhancement Mode Field Effect Transistor
Description
N-Channel Enhancement Insulated Gate Bipolar
Transistor
HGH25N120A █ Applications Induction heating and Microwave oven Soft switching applications █ Features TO-3P Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V High input impedance Field stop trench technology offer superior conduction and switching performances, High speed switching █ Ab...
HUASHAN ELECTRONIC
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HGH25N120A
N-Channel Enhancement Mode Field Effect Transistor
- HUASHAN ELECTRONIC
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