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HGH20N120A

HUASHAN ELECTRONIC
Part Number HGH20N120A
Manufacturer HUASHAN ELECTRONIC
Description N-Channel Enhancement Mode Field Effect Transistor
Published Dec 7, 2016
Detailed Description N-Channel Enhancement Insulated Gate Bipolar Transistor HGH20N120A █ Applications • Induction heating and Microwave o...
Datasheet PDF File HGH20N120A PDF File

HGH20N120A
HGH20N120A

Overview
N-Channel Enhancement Insulated Gate Bipolar Transistor HGH20N120A █ Applications • Induction heating and Microwave oven • Soft switching applications █ Features TO-3P • Low saturation voltage, Vce(on)(typ)=2.
3V@Vge=15V • High input impedance • Field stop trench technology offer superior conduction and switching performances, • High speed switching █ Absolute Maximum Ratings 1―Gate，G 2―Collector，C 3―Emitter，E Symbol VCES VGES Description Collector to Emitter Voltage Gate to Emitter Voltage Ratings 1200 ±30 Units V V Collector Current（TC = 25℃） IC Collector Current（TC = 100℃） 40 20 A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 ...


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