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HFP60N06

HUASHAN ELECTRONIC

N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor █ Application...


HUASHAN ELECTRONIC

HFP60N06

File Download Download HFP60N06 Datasheet


Description
Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. █ Features 60A, 60V(See Note), RDS(on) <11.5mVΩ@VGS = 10 V Fast switching 100% avalanche tested Minimize input capacitance and gate charge Exceptional dv/dt capability TO-220 1- G 2-D 3-S █ Maximum Ratings(Ta=25℃ unless otherwise specified) Tstg——Storage Temperature ------------------------------------------------------ -55~165℃ Tj ——Operating Junction Temperature -------------------------------------------------- 150℃ VDSS —— Drain-Source Voltage ----------------------------------------------------------60V VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V ID —— Drain Current (Continuous)(Tc=25℃)-----------------------------------------...




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