AUIRFR120Z

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. VDSS RDS(on) ID AUIRFR120Z AUIRFU120Z typ. max. 100V 150m 190m 8.7A D D S G D-Pak AUIRFR120Z S GD I-Pak AUIRFU120Z G Gate D Drain S Source Base part number AUIRFU120Z AUIRFR120Z Package Type I-Pak D-Pak Standard Pack Form Quanti...