AUIRF7640S2TR

  AUTOMOTIVE GRADE AUIRF7640S2TR  Advanced Process Technology  Optimized for Class D Audio Amplifier and High Speed Switching Applications  Low Rds(on) for Improved Efficiency  Low Qg for Better THD and Improved Efficiency  Low Qrr for Better THD and Lower EMI  Low Parasitic Inductance for Reduced Ringing and Lower EMI  Delivers up to 100W per Channel into 8 Load  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. RG (typical) Qg (typical) 60V 27m 36m 3.5 7.3nC    Applicable DirectFET® Outline and Substrate Outline  SB DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best i...