Power MOSFET
Features Advanced Process Technology Low On-Resistance Logic Level Gate Drive P-Channel MOSFET Dynamic dV/d...
Description
Features Advanced Process Technology Low On-Resistance Logic Level Gate Drive P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified*
AUTOMOTIVE GRADE
AUIRF7207Q
S 1
S2 S3 G4
A 8D 7D 6D 5D
Top View
HEXFET® Power MOSFET
VDSS
-20V
RDS(on) max ID
0.06 -5.4A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8
Base part number AUIRF7207Q
Package Type SO-8
Standard Pack
Form
Quantity
Tape and Reel
2...
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