AUIRF6218L

  AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features  Advanced Planar Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS HEXFET® Power MOSFET -150V RDS(on) max. 150m ID -27A DD S G D2Pak AUIRF6218S G Gate D Drain S GD TO-262 AUIRF6218L S Source Base part number AUIRF6218L AUIRF6218S Package Type TO-262...