AUIRF5210S

  AUTOMOTIVE GRADE AUIRF5210S Features  Advanced Process Technology  P-Channel MOSFET  Ultra Low On-Resistance  Dynamic dv/dt Rating  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.. VDSS RDS(on) ID G Gate max. -100V 60m -38A D S G D2Pak AUIRF5210S D Drain S Source Base part number AUIRF5210S Package Type D2-Pak Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number AUIR...