AUIRF2903ZS

AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) AUIRF2903ZS AUIRF2903ZL 30V 1.9m 2.4m 235A 160A D D S G D2Pak AUIRF2903ZS S GD TO-262 AUIRF2903ZL G Gate D Drain S Source Base part number AUIRF2903ZL AUIRF2903ZS Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRF2903ZL AUIRF2903ZS AUIRF2903ZSTRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect de...