AUIRF1010EZS

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 6.8m 8.5m 84A 75A DD GDS TO-220AB AUIRF1010EZ G Gate S G D2Pak AUIRF1010EZS S GD TO-262 AUIRF1010EZL D Drain S Source Base part numbe...