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BT15T120ANF Dataheets PDF



Part Number BT15T120ANF
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon FS Planar IGBT
Datasheet BT15T120ANF DatasheetBT15T120ANF Datasheet (PDF)

Silicon FS Planar IGBT BT15T120ANF ○R General Description: Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 15 186 1.95 V A W V Features: l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applica.

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Silicon FS Planar IGBT BT15T120ANF ○R General Description: Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 15 186 1.95 V A W V Features: l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications: Power switch circuit of induction cooker(IH). Absolute Maximum Ratings (Tc= 25℃ unless otherwise specified): Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C IFM Diode Maximum Forward Current Power Dissipation @ TC = 25°C PD Power Dissipation @TC = 100 °C TJ,Tstg Operating Junction and Storage.


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