Document
Silicon FS Planar IGBT
BT15T120ANF
○R
General Description:
Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.
VCES IC Ptot (TC=25℃)
VCE(SAT)
1200 15 186 1.95
V A W V
Features:
l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.95V
@ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability
Applications:
Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings
(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
IC
ICMa1 IF
Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C
IFM Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
PD Power Dissipation @TC = 100 °C
TJ,Tstg Operating Junction and Storage.