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BT50N60ANF

Huajing Microelectronics
Part Number BT50N60ANF
Manufacturer Huajing Microelectronics
Description Silicon FS Planar IGBT
Published Dec 6, 2016
Detailed Description Silicon FS Planar IGBT BT50N60ANF ○R General Description： Using HUAJING's proprietary Trench design and advanced FS te...
Datasheet PDF File BT50N60ANF PDF File

BT50N60ANF
BT50N60ANF

Overview
Silicon FS Planar IGBT BT50N60ANF ○R General Description： Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot TC=25℃） VCE(SAT) 600 50 312 1.
7 V A W V Features： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.
7V @ IC =50A and TC = 25°C l Extremely enhanced avalanche capability Applications： Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF Colle...


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