Silicon N-Channel Power MOSFET
CS3N40 A23
○R
General Description:
VDSS
400 V
CS3N40 A23, the silicon N-channel Enha...
Silicon N-Channel Power MOSFET
CS3N40 A23
○R
General Description:
VDSS
400 V
CS3N40 A23, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W
which reduce the conduction loss, improve switching
RDS(ON)TYP
2.8 Ω
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
SOT-223, which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of LCD Power and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100...